AM1960NE these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sc70-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units t <= 5 sec 415 steady-state 460 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja esd protected 2000v sc70-6 top view d1 g2 s2 s1 g1 d2 1 2 3 6 5 4 n-channel mosfet n-channel mosfet d 1 g 1 s 1 d 2 g 2 s 2 v ds (v) r ds(on) ( ? )i d (a) 2.0 @ v gs = 4.5v 0.32 3.0 @ v gs = 2.5v 0.26 60 product summary symbol maximum units v ds 60 v gs 20 t a =25 o c 0.32 t a =70 o c 0.26 i dm 0.7 i s 0.25 a t a =25 o c 0.3 t a =70 o c 0.21 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs ( th ) v ds = v gs , i d = 250 ua 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 10 ua v ds = 48 v, v gs = 0 v 1 v ds = 48 v, v gs = 0 v, t j = 55 o c 50 on-state drain current a i d ( on ) v ds = 5 v, v gs = 10 v 0.3 a v gs = 10 v, i d = 0.3 a 2 v gs = 4.5 v, i d = 0.2 a 3 forward tranconductance a g fs v ds = 4.5 v, i d = 0.3 a 8 s diode forward voltage v sd i s = 0.2 a, v gs = 0 v 1.10 v total gate charge q g 0.4 gate-source charge q g s 0.1 gate-drain charge q g d 0.1 turn-on delay time t d ( on ) 10 rise time t r 6 turn-off delay time t d ( off ) 20 fall-time t f 3 ? parameter limits unit v dd = 10 v, r l = 30 ? , i d = 0.3 a, v gen = 10 v v ds = 10 v, v gs = 5 v, i d = 0.3 a nc ns dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol drain-source on-resistance a r ds(on) AM1960NE product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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